OSC-0.7L Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

OSC-0.7L
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI OSC-0.7L is Designed for
General Purpose Oscillator
Applications up to 1.68 GHz.
FEATURES:
• V_CC = 18 V
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
150 mA
V_CB
40 V
P_DISS
7.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
25 °C/W
PACKAGE STYLE TO-46
ORDER CODE: ASI10637
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 18 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 18 V
f = 1.0 MHz
η_C
f_t
P_OSC
V_CC = 18 V
V_CE = 10 V
V_CC = 18 V
P_OUT = 0.7 W
I_E = 100 mA
I_E = 150 mA
f = 1.68 GHz
f = 200 MHz
f = 1.68 GHz
MINIMUM TYPICAL MAXIMUM
20
40
3.0
100
25
250
5.0
25
2,500
700
UNITS
V
V
V
µA
---
pF
%
MHz
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
1/1