NE64700 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON MICROWAVE TRANSISTOR

NE64700
NPN SILICON MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI NE64700 is a bipolar
transistor Designed for low noise
applications at VHF, UFH and
microwave frequencies up to 12 GHz.
FEATURES:
• P_G = 18.1 dB Typical @ 1.0 GHz
• NF = 1.6 dB Typical @ 1.0 GHz
MAXIMUM RATINGS
I_C
20 mA
V_CEO
7.0 V
V_CBO
9.0 V
V_EBO
1.5 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE: CHIP
5⁵ 14
2
B
0.0007 Inch Gold Wire BASE
Chip Dimension: (250 x 250) x 125 µm
Bond Pad: 50 x 50 µm
Die Attach: Gold Eutectic
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 8.0 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 8.0 V
I_C = 10 mA
MINIMUM TYPICAL MAXIMUM
0.2
1.0
50
100
250
UNITS
µA
µA
---
C_CB
V_CB = 8.0 V
f = 1.0 MHz
0.11
pF
NF
P_G
P_1dB
f_t
S21²
V_CE = 8.0 V
V_CE = 8.0 V
I_C = 10 mA
V_CE = 8.0 V
I_C = 2.0 mA
I_C = 10 mA
I_C = 10 mA
I_C = 20 mA
I_C = 10 mA
I_C = 20 mA
f = 1.0 MHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
1.6
15
12
12
7.5
18.1
12.8
12.6
dB
dB
dBm
GHz
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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