NE64535 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON LOW NOISE RF TRANSISTOR

NE64535
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The ASI NE64535 is a Common
Emitter Device Designed for Low Noise
Class A Amplifier Applications up to 4.0
GHz.
FEATURES INCLUDE:
• N_F = 1.6 dB Typical @ 2 GHz
•S_21E² = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package
PACKAGE STYLE .085 4L SQ
MAXIMUM RATINGS:
I_C
60 mA
V_CBO
25 V
V_CEO
12 V
V_EBO
P_DISS
1.5 V
300 mW @ T_A ≤ 75 ^OC
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
85 °C/W
1 = Collector
2 & 4 = Emitter
3 = Base
ORDER CODE: ASI10752
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 8 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 8.0 V
I_C = 7.0 mA
C_CB
V_CB = 10 V
f_t
S_21E²
NF
GA
V_CE = 10 V
V_CE = 8 V
V_CE = 8 V
I_C = 20 mA
I_C = 20 mA
I_C = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
100
1.0
50
250
UNITS
nA
µA
---
0.6
pF
8.0
8.5
GHz
10
11
dB
1.6
2.5
10
11
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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