NE56787 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HI FREQUNCY TRANSISTOR

NE56787
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE56787 is Designed for
general purpose and ultra linear small
signal amplifier applications up to 4.0
GHz.
FEATURES INCLUDE:
• Ideal for linear Class-A amplifiers
MAXIMUM RATINGS:
I_C
60 mA
V_CBO
25 V
V_CEO
12 V
V_EBO
2.0 V
P_DISS
600 mW @ T_A ≤ 75 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
40 °C/W
PACKAGE STYLE .100 2L
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 10 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 10 V
I_C = 30 mA
C_OB
V_CB = 10 V
f_s
S₂₁ ² = 0 dB
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
1.0
1.0
30
100
200
UNITS
µA
µA
---
0.44
0.80
pF
7.5
8.0
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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