NE02103 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

NE02103
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI NE02103 is Designed for
Oscillator and Amplifier Applications up to
2.0 GHz.
PACKAGE STYLE .100 4LPILL
FEATURES INCLUDE:
• High insertion gain, 18.5 dB at 500 MHz.
• High power gain, 1.5 dB at 500 MHz.
• Low noise figure, 12 dB at 2 GHz.
• For JAN level add sufix D
MAXIMUM RATINGS
I_C
70 mA
V_CBO
25 V
V_CEO
12 V
V_EBO
3.0 V
P_DISS
350 mW @ T_A = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
70 °C/W
1 = BASE
2&4 = EMITTER
3 = COLLECTOR
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 15 V
I_EBO
V_EB = 2.0 V
h_FE
V_CE = 10 V
I_C = 20 mA
C_CB
V_CB = 10 V
f = 1.0 MHz
f_t
⏐S₂₁⏐²
NF_MIN
V_CE = 10 V
V_CE = 10 V
V_CE = 10 V
V_CE = 10 V
I_C = 20 mA
I_C = 20 mA
I_C = 3.0 mA
I_C = 5.0 mA
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
1.0
1.0
20
250
UNITS
µA
µA
---
0.6
1.0
pF
4.5
GHz
18.5
13
dB
5.5
6.5
1.5
dB
2.7
4.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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