MWA130 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – RF HYBRID AMPLIFIER

RF HYBRID AMPLIFIER
MWA130
DESCRIPTION:
The MWA130 is Designed for
broadband linear Applications up to
400 MHz Frequency Range.
FEATURES:
• P_G = 14 dB Typical
• P_1dB = +18.0 dBm Typical
• 50 Ω Input/ Output Impedance
MAXIMUM RATINGS
V_D
5.5 V
I_D
60 mA
P_DISS 350 mW @ T_C = 25 °C
RF_INPUT 100 mW @ T_C = 25 °C
T_C
-65 to +125 °C
T_STG
-65 to +200 °C
θ_JC
110 °C/W
PACKAGE STYLE
DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 8.51 9.39 0.335 0.370
B 7.75 8.50 0.305 0.335
C 3.81 4.57 0.165 0.019
D 0.41 0.48 0.016 0.019
G 5.08 BSC
0.200 BSC
H 0.72 0.86 0.028 0.034
J 0.74 0.14 0.029 0.045
K 12.70 -- 0.500 --
M 45° BSC
45° BSC
N 2.54 BSC
1 = Input 2 = output 3 = gnd. (CASE)
0.100 BSC
NONE
CHARACTERISTICS TA = 25 °C
SYMBOL
TEST CONDITIONS
V_D
I_D = 60 mA
MINIMUM
5.0
G_P
NF
P_1dB
P_R1
VSWR
V_D = 3.1 V
I_D = 60 mA
13
f = 1,00 MHz
10.0
TYPICAL
5.8
14
7.0
±18
16.8
MAXIMUM
6.5
3:1
UNITS
V
dB
dB
dBm
dB
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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