MV1807J1 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON VARACTOR DIODE

MV1807J1
SILICON VARACTOR DIODE
DESCRIPTION:
The ASI MV1807J1 is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
PACKAGE STYLE DO-4
MAXIMUM RATINGS
I
100 mA
V
P_DISS
T_J
T_STG
θ_JC
80 V
21 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +175 ^OC
6.0 ^OC/W
Cathode to case
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V_R = 6.0 V
f = 1.0 MHz
R_S
V_R = 6.0 V
f = 50 MHz
F_OUT
P_OUT
F_IN
P_IN
MINIMUM
80
10.8
25.1
NONE
TYPICAL MAXIMUM
13.2
0.25
1000
500
37.0
UNITS
V
pF
Ohms
MHz
W
MHz
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1