MSC85623 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF TRANSISTOR

MSC85623
NPN RF TRANSISTOR
DESCRIPTION:
The ASI MSC85623 is a Silicon NPN
Microwave Transistor Supplied in a
Common Base Package, Designed for
RF Amplifier and Oscillator
Applications up to 3.0 GHz.
MAXIMUM RATINGS
I_C
150 mA
V_CEO
14 V
V_CB
40 V
V_EB
P_DISS
T_J
T_STG
θ_JC
3.5 V
25 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
7.0 ^OC/W
PACKAGE 230 2L FLG
1 = Collector 2 = Emitter
3 = Base
TRANS1.SYM
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 510 Ω
BV_CBO
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 21 V
P_G
η_C
V_CC = 28 V
P_out = 5.0 W f = 3.0 GHz
MINIMUM
14
30
40
3.5
TYPICAL MAXIMUM
2.0
5.5
30
UNITS
V
V
V
V
mA
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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