MSC81111 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC81111
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MSC81111 is Designed for Class
"C" Amplifier Applicatioons from 0.4 to
1.2 GHz, Supplied in Common Base
Package.
MAXIMUM RATINGS
I_C
600 mA
V_CB
35 V
P_DISS
21.8 W @ T_C = 25 ^OC
T_J
-65 ^OC to +200 ^OC
T_STG
-65 ^OC to +200 ^OC
θ_JC
8 ^OC/W
PACKAGE STYLE HLP-1
1 = Emitter 2 = Collector
3 = Base
Dim:
A
B
C
D
E
F
H
J
K
N
Q
U
Inches
Min
0.790
0.225
0.144
0.115
0.055
0.045
0.115
0.003
0.225
0.220
0.125
0.552
Max
0.810
0.235
0.180
0.125
0.065
0.055
0.135
0.006
0.275
0.240
0.135
0.572
Millimeters
Min
Max
20.07 20.6
5.72 5.97
3.66 4.58
2.93 3.17
1.40 1.65
1.15 1.39
2.93 3.42
0.08 0.15
5.72 6.98
5.59 6.09
3.18 3.42
14.03 14.5
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CER
I_C = 5.0 mA
R_BE = 10Ω
BV_CBO
I_C = 1.0 mA
I_CBO
V_CB = 28 V
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 200 mA
C_OB
V_CB = 28 V
f = 1.0 MHz
P_out
η_C
G_P
V_CC = 28 V
P_in = 500 mW
f = 1.0 GHz
NONE
MINIMUM TYPICAL MAXIMUM
45
45
1.0
3.5
15
120
UNITS
V
V
mA
V
---
6.5
pF
5.0
6.6
W
50
52
%
10
11.2
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1