MSC81090 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC81090
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC81090 is Designed for
General Purpose Class A Power
Amplifier Applications from 0.4 - 1.2
GHz.
FEATURES:
• P_G = 10 dB min. at 2.0 W/ 1.0 GHz
• Hermetically sealed Package
• Omnigold™ Metalization System
• Emitter Ballasted
MAXIMUM RATINGS
I_C
200 A
V_CC
35 V
P_DISS
6.25 W @ T_C ≤ 75 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
20 °C/W
PACKAGE STYLE .230 4L STUD
COMMON EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
15
120
UNITS
V
V
V
mA
---
C_ob
V_CB = 18 V
f = 1.0 MHz
3.2
pF
P_OUT
η_C
V_CE = 18 V
P_IN = 0.2 W
f = 1.0 GHz
2.0
50
2.2
55
W
%
G_P
10
10.4
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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