MSC81035M Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81035M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC81035M is a common
base device, medium power Class C
transistor for pulsed
L-Band avionics, DME/TACAN
Applications.
FEATURES:
• Input matching
• Emitter site Ballasted.
• P_G = 10 dB at 35 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.0 A
V_CC
55 V
P_DISS
150 W @ T_C ≤ 100 °C
T_J
-65 °C to +250 °C
T_STG
θ_JC
-65 °C to +150 °C
1.0 °^OC/W
PACKAGE STYLE .250 2L FLG (B)
A
ØD
.100 X 45°
.088 x 45°
CHAMFER
C
B
E
F
G
H
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
1.050 / 26.67
C
.245 / 6.22
D
.120 / 3.05
E
.552 / 14.02
F
.790 / 20.07
G
H
.003 / 0.08
I
.052 / 1.32
J
.120 / 3.05
K
IJ ^K
MAXIMUM
inches / mm
.105 / 2.67
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.007 / 0.18
.072 / 1.83
.130 / 3.30
.210 / 5.33
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
65
3.5
5.0
15
120
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V
P_IN = 3.0 W
P_OUT = 35 W
f = 1025-1150 MHz
10.7
43
11.2
48
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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