MSC80917 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF MICROWAVE TRANSISTOR

MSC80917
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MSC80917 is low level
Class-C, Common Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
• Omnigold™ Metalization System
• P_OUT 4.0 W Min.
• G_P = 10 dB
MAXIMUM RATINGS
I_C
1.0 A
V_CE
37 V
P_DISS
7.5 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
35 °C/W
PACKAGE STYLE .280 2L FL (B)
2
3
1
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 35 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
20
3.5
1.0
20
120
UNITS
V
V
V
mA
G_P
P_OUT
10
V_CE = 35 V P_IN = 400 mW f = 1025 to 1150 MHz
PULSE WIDTH = 10 µS
DUTY CYCLE = 1.0%
4.0
dB
W
η
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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