MSC80914 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC80914
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC80914 is Designed for
Class C, Common Base General
Purpose Applications to 2.3 GHz.
FEATURES INCLUDE:
• Gold Metalization
• Site Emitter Ballasting
MAXIMUM RATINGS
I_C
200 mA
V_CC
P_DISS
T_J
T_STG
θ_JC
35 V
7.0 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
20 ^OC/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
15
150
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
3.0
3.5
pF
P_out
1.0
1.25
W
P_G
V_CC = 28 V
P_in = 200 mW
fo = 2.0 GHz
7.0
8.0
dB
η_C
35
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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