MSC80614 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC80614
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC80614 is designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
FEATURES INCLUDE:
• Omnigold^TM Metalization system
• Input Matching network
• Emitter Ballasting
MAXIMUM RATINGS
I_C
250 mA
V_CC
37 V
P_DISS
10 W @ T_C ≤ 100 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
10 °C/W
PACKAGE STYLE .280 2L FLG
2
3
1
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 5.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 35 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
1.0
30
300
UNITS
V
V
mA
---
P_G
P_IN
V_CC = 35 V P_OUT = 2.0 W f = 1025 to 1150 MHz
PULSE WIDTH = 10 µS
DUTY CYCLE = 1.0%
9.0
0.25
dB
W
η_C
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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