MSC80213 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN RF TRANSISTOR

MSC80213
NPN RF TRANSISTOR
DESCRIPTION:
The ASI MSC80213 is a Silicon NPN
Microwave Transistor Supplied in a
Common Base Package, Designed for
general purpose Applications up to 2.3
GHz.
FEATURES:
• Hermetically Sealed Package
• Gold Metallization
MAXIMUM RATINGS
I_C
600 mA
V_CC
26 V
V_EB
P_DISS
T_J
T_STG
θ_JC
3.5 V
11.5 W @ T_C = 50 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
13 ^OC/W
PACKAGE 230 2L FLG
1 = Collector 2 = Emitter
3 = Base
TRANS1.SYM
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CER
I_C = 5.0 mA
R_BE = 10Ω
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
C_OB
V_CB = 22 V
f = 1.0 MHz
P_out
P_G
V_CC = 22 V
P_IN = 0.38 W f = 2.3 GHz
η_C
MINIMUM
44
44
3.5
30
3.8
10
40
TYPICAL MAXIMUM
0.5
300
5.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
UNITS
V
V
V
mA
pF
W
Db
%
REV. A
1/1