MSC8004 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – HIGH POWER GaAs FET

HIGH POWER GaAs FET
MSC8004
FEATURES INCLUDE:
• High Output Power:
P1dB = 1.6 W (TYP) @ 12 GHz
• High power gain:
GLP = 5 dB (TYP) @ 12 GHz
• High power added efficiency:
Hadd = 18% (TYP) @ 12 GHz
APPLICATIONS:
• S to Ku Band Power Amplifiers
ELECTRICAL SPECIFICATIONS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
SATURATED DRAIN CURRENT
I_DDS
V_DS = 3.0 V
V_GS = 0 V
V_{GS (off)}
GATE TO SOURCE CUT-OFF VOLTAGE
V_DS = 3.0 V
I_D = 1.0 mA
FET PACKAGE TYPE 30
TRANS1.SYM
MINIMUM TYPICAL MAXIMUM UNITS
850
1100
1400
mA
-2
-3
-5
V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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