MSC8001 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – HIGH POWER GaAs FET

HIGH POWER GaAs FET
MSC8001
FEATURES INCLUDE:
• 27.5 dBm Output Power with 7db
Associated Gain at 8 GHz
• Power Optimized Design Provides
High Power-added Efficiency
• Large Cross Section Ti/Pt/Au
Gates Enhance Durability and
Reliability
• Chip Devices are Selected from
Standard Military Grade Wafers
• Hermetic Metal/Ceramic Package
Suitable for Hi-Rel Applications
• Custom Electrical Test and
Screening Available for Source
Control Drawings
RF ELECTRICAL SPECIFICATIONS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
MAG
MAX AVAILABLE GAIN
FREQUENCY = 8.0 GHz
PMAG
OUTPUT POWER AT MAG TUNING
FREQUENCY = 8.0 GHz
FET PACKAGE TYPE 30
TRANS1.SYM
MINIMUM TYPICAL MAXIMUM UNITS
8.5
dB
24
dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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