MSC74519 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

MSC74519
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC74519 is a Common
Base Device Designed for Class C
Applications in the 1.6 - 1.8 GHz
bands.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Hermetically Sealed Package
• Emitter Ballasting
MAXIMUM RATINGS
I_C
1.0 A
V_CBO
P_DISS
T_J
T_STG
θ_JC
40 V
31 W @ T_C = 25 ^OC
-55 ^OC to+200 ^OC
-55 ^OC to+200 ^OC
5.5 ^OC/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 2.0 mA
BV_EBO
I_C = 2.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5 V I_C = 0.4 A
P_G
V_CC = 20 V P_IN = 2.0 W f = 1.6 - 1.8 GHz
η_C
Pulse Width = 100 µS
Duty Cycle = 10%
MINIMUM TYPICAL MAXIMUM
40
3.5
0.5
10
200
UNITS
V
V
mA
---
6.8
dB
47
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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