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MSC72166 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR
MSC72166
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MSC72166 is Designed for High
Power Pulsed IFF Avionics
Applications.
MAXIMUM RATINGS
IC
40 A
VCC
PDISS
TJ
TSTG
θJC
50 V
1350 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.06 OC/W
PACKAGE STYLE .400X.500 COMMON BASE
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCES
IC = 150 mA
BVCBO
IC = 25 mA
ICES
VCE = 50 V
IEBO
VEB = 3.5 V
hFE
VCE = 5.0 V
IC = 1.0 A
Pout
GP
VCC = 50 V
Pin = 130 W
f = 1030 MHz
MINIMUM TYPICAL MAXIMUM
40
65
35
10
5.0
200
630
6.5
UNITS
V
V
mA
mA
---
W
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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