MSC3003 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC3003
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC3003 is a common base
transistor capable of providing 3.0 W
Class-C RF output power @ 3.0 GHz.
FEATURES:
• P_G = 6.0 dB min. at 3 W / 3,000 MHz
• Difused Ballast Resistor
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
60 mA
V_CC
30 V
P_DISS
10 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
17 °C/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
30
300
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
5.0
pF
PG
ηC
VSWR
VCC = 28 V
W
POUT = 3.0 W
6.0
f = 3.0 GHz PIN = 0.75
dB
30
%
30:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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