MSC3000 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC3000
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC3000 is Designed for
general purpose Amplifier Applications
up to 3500 MHz.
FEATURES:
• P_OUT = 5.0 W Typ. at 3 GHz
• Common Base Configuration
• Omnigold™ Metellization System
MAXIMUM RATINGS
I_C
100 mA
V_CC
30 V
P_DISS
2.5 W @ T_C ≤ 85 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
45 °C/W
PACKAGE STYLE .250 2L FLG (B)
A
1
.100 X 45°
ØD
.088 x 45°
CHAMFER
3
C
B
2
E
F
G
H
K
IJ
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
1.050 / 26.67
C
.245 / 6.22
D
.120 / 3.05
E
.552 / 14.02
F
.790 / 20.07
G
H
.003 / 0.08
I
.052 / 1.32
J
.120 / 3.05
K
MAXIMUM
inches / mm
.105 / 2.67
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.007 / 0.18
.072 / 1.83
.130 / 3.30
.210 / 5.33
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CER
I_C = 5.0 mA
R_BE = 10Ω
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
C_OB
V_CB = 28 V
P_G
V_CC = 28 V
P_OUT = 0.5 W
η_C
NONE
MINIMUM TYPICAL MAXIMUM
50
50
3.5
250
20
120
UNITS
V
V
V
µA
---
f = 1.0 MHz
2.5
pF
f = 3.0 GHz
7.0
dB
25
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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