MSC1300M Datasheet, PDF (1/1 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC1300M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC1300M is a high power
Class C, common Base transistor,
Designed for IFF/DME/TACAN
Applications.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 6.3 dB at 300 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CC
55 V
P_DISS
625 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.20 °C/W
PACKAGE STYLE .400 2NL FLG
2X B
A
.025 x 45°
4x .062 x 45°
ØD
C
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
G
H
I
J
K
L
M IN IM U M
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.193 / 4.90
.450 / 11.43
.125 / 3.18
P
MN
M A X IM U M
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CER
I_C = 25 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
15
120
UNITS
v
V
V
mA
---
G_P
V_CC = 50 V
η_C
P_OUT = 300 W
f = 1090 MHz
6.3
35
6.7
42
dB
%
Pulse Width = 10 µsec, Duty Cycle 10 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1