MSC1035M Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MSC1035M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC1035M is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
FEATURES:
• Class C Operation
• P_G = 10.7 dB at 35 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.0 A PEAK
V_CB
65 V
P_DISS
150 W PEAK
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
1.0 °C/W
PACKAGE STYLE .280 2L FLG
3
2
1
1 = Collector 2 = Emitter 3 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
65
3.5
5.0
15
120
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V P_OUT = 35 W
P_IN = 3.0 W
f = 1025 – 1150 MHz
10.7
43
11.2
48
dB
%
Pulse width = 10 µSec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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