MSC1004M Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC1004M
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MSC1004M is low level
Class-C, Common Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Emitter Ballasting
MAXIMUM RATINGS
I_C
650 mA
V_CC
P_DISS
T_J
T_STG
θ_JC
32 V
18 W @ T_C ≤ 100 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
5.0 ^OC/W
PACKAGE STYLE .250 SQ 2L FL
2
3
1
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 25 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
1.0
30
300
UNITS
V
V
mA
P_G
P_OUT
η
9.0
V_CE = 28 V P_IN = 500 mW f = 1025 to 1150 MHz
PULSE WIDTH = 10 µS
DUTY CYCLE = 1.0%
4.0
35
dB
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1