MS2608 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF MICROWAVE TRANSISTOR

MS2608
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MS2608 is Designed for pulsed S-
Band radar applications from 2.7 to 3.1 GHz.
FEATURES:
• Internal Input/Output Matching Network
• P_G = 6.0 dB at 12 W/2.7-3.1 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CC
46 V
P_DISS
50 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
θ_JC
-65 °C to +200 °C
4.0 °^OC/W
PACKAGE STYLE .400 2L FLG
N
B
2
D
L
J
A
1
3
O
E
K
C
4
M
G
P
.062 x 45°
Ø.120
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
F
H
M IN IM U M
inches / mm
.395 / 10.03
.140 / 3.56
.110 / 2.80
.110 / 2.80
.193 / 4.90
.003 / 0.08
.118 / 3.00
.050 / 1.27
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
.405 / 10.29
.170 / 4.32
.062 / 1.58
I
Q
R
M A X IM U M
inches / mm
.407 / 10.34
.230 / 5.84
.006 / 0.15
.131 / 3.33
1 = COLLECTOR 2&3 = BASE 4 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 7.0 mA
BV_CER
I_C = 7.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 40 V
h_FE
V_CE = 5.0 V
I_C = 600 mA
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5.0
30
150
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 40 V
P_OUT = 12 W
f = 2.7 to 3.1 GHz
6.0
30
dB
%
Note:
Pulse Widht = 100 µS
Duty Cycle = 10 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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