MS2601 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

MS2601
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI MS2601 is Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications up to 3.1
GHz.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
0.45 A
V_CC
34 V
P_DISS
11.5 W @ T_C = 25 °C
T_J
-65 °C to+200 °C
T_STG
-65 °C to+200 °C
θ_JC
13.0 °C/W
PACKAGE STYLE 400 x 400 2NL FLG
1
2
4
3
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 5 V I_C = 100 mA
P_OUT
P_G
η_C
V_CC = 30 V P_IN = 0.3 W f = 2700 to 3100 MHz
Pulse Width = 100 µS
Duty Cycle = 10%
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
10
150
UNITS
V
V
V
mA
---
1.0
W
5.2
dB
27
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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