MS175H Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

MS175H
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The MS175H is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I_C
100 mA (PEAK)
V_CE
P_DISS
T_J
T_STG
15 V
300 mW @ T_C = 25 ^OC
200 mW @ T_A = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
PACKAGE STYLE TO-72
1 = EMITTER
2 = BASE
3 = COLLECTOR 4 = CASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 10 µA
I_CBO
V_CB = 20 V
T_A = 150 ^OC
BV_EBO
I_E = 1.0 µA
h_FE
V_CE = 1.0 V
I_C = 5.0 mA
V_CE(SAT)
I_C = 20 mA
I_B = 2.0 mA
V_BE(SAT)
I_C = 20 mA
I_B = 2.0 mA
f_t
V_CE = 10 V
I_C = 5.0 mA
f = 100 MHz
C_ob
V_CB = 0 V
V_CB = 10 V
f = 1.0 MHz
f = 1.0 MHz
C_ib
V_EB = 0.5 V
f = 1.0 MHz
NF
G_pe
V_CE = 6.0 V I_C = 1.5 mA
f = 200 MHz
P_o
V_CB = 10 V
I_E = 12 mA
η
f = 500 MHz
NONE
MINIMUM TYPICAL MAXIMUM
15
30
0.01
1.0
2.0
40
150
0.8
1.0
1500
3.0
1.0
3.0
3.5
4.5
15
30
25
UNITS
V
V
µA
V
---
V
V
MHz
pF
pF
dB
mW
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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