MRW54001 Datasheet, PDF (1/1 Pages) Motorola, Inc – MICROWAVE LINEAR POWER TRANSISTORS

MRW54001
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRW54001 is Designed for
Classs "A" and "AB" Amplifier
Applications Up to 2.0 GHz.
FEATURES:
• Omnigold™ Metalization System
• Implanted ballast resistors
• Common-Emitter
PACKAGE STYLE .200 4L PILL
MAXIMUM RATINGS
I
160 mA
V_CEO
22 V
V_CES
50 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
40 °C/W
UNIT
mm
inches
1 = Collector 3 = Base 2 & 4 = Emitter
b
B1
c
D
D1
D2
H
1.63
0.81
0.16
3.38
5.28
5.23
19
1.38
0.71
0.10
3.08
5.12
5.13
17
0.065 0.032 0.006 0.133 0.208 0.206 0.75
0.055 0.028 0.004 0.121 0.202 0.202 0.67
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 250 µA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
f_t
V_CE = 20 V
C_ob
V_CB = 28 V
I_E = 120 mA
f = 1.0 MHz
G_PE
V_CE = 20 V
L_G
f = 2.0 GHz
I_CQ = 120 mA
P_out = 0.5 W
NONE
MINIMUM TYPICAL MAXIMUM
22
50
45
3.5
250
20
120
UNITS
V
V
V
V
µA
---
4.0
4.5
GHz
3.5
pF
10
dB
-0.2/+1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1