MRW53601 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRW53601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRW53601 is Designed for
Classs "A" and "AB" Amplifier
Applications Up to 2.0 GHz.
MAXIMUM RATINGS
I
250 mA
V
T_J
T_STG
θ_JC
22 V
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
40 ^OC/W
PACKAGE STYLE HLP-1
1 = Base 2 = Collector
3 = Emitter
Dim:
A
B
C
D
E
F
H
J
K
N
Q
U
Millimeters
Min
Max
0.790 0.810
0.240 0.260
0.144 0.170
0.115 0.125
0.055 0.065
0.045 0.055
0.115 0.135
0.003 0.006
0.225 0.275
0.220 0.240
0.125 0.135
0.552 0.572
Inches
Min
20.07
6.10
3.66
2.93
1.40
1.15
2.93
0.08
5.72
5.59
3.18
14.03
Max
20.57
6.60
4.31
3.17
1.65
1.39
3.42
0.15
6.98
6.09
3.42
14.52
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_CBO
I_C = 1.0 mA
I_CBO
V_CB = 28 V
BV_EBO
I_E = 250 µA
h_FE
V_CE = 5.0 V
I_C = 100 mA
f_t
V_CE = 20 V
C_ob
V_CB = 28 V
I_E = 120 mA
f = 1.0 MHz
G_PE
V_CE = 20 V
L_G
f = 2.0 GHz
I_CQ = 120 mA
P_out = 0.5 W
MINIMUM TYPICAL MAXIMUM
22
50
45
250
3.5
20
120
UNITS
V
V
V
µA
V
---
3.0
GHz
3.5
pF
10
dB
-0.2/+1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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