MRW2020 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRW2020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRW2020 is a high
performance common base RF power
transistor intended for 28V operation
across the 1 to 2.3 GHz frequency
range.
FEATURES:
• Gain: 5.2 dB Min. at 20 W
• Output Power: 20 W
• Diffused Ballast Resistors
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A
V_CES
50 V
V_EBO
3.5 V
P_DISS
60 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
3.0 °C/W
PACKAGE STYLE .250X.300 2L FLG
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 160 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 800 mA
MINIMUM TYPICAL MAXIMUM
50
---
---
3.5
---
---
---
---
2.0
10
---
100
UNITS
V
V
A
---
C_ob
V_CB = 28 V
f = 1.0 MHz
---
---
24
pF
G_PB
η_C
V_CC = 28 V
P_OUT = 20 W
f = 2.0 GHz
5.2
40
---
---
---
dB
---
%
Ψ
V_CC = 28 V
f = 2.0 GHz
Load VSWR = ∞:1, All Phase Angles
No Degradation in Output Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1