MRF962_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

MRF962
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF962 is designed for
Low-to-medium power amplifier
applications, requiring high gain, low
noise figure, and low intermodulation
distortion.
FEATURES:
• NF = 2.0 dB
• Omnigold™ Metalization System
• Hermetic stripline, ceramic package
MAXIMUM RATINGS
I_C
100 mA
V_CB
20 V
P_DISS
.75 W @ T_C = 100 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
133 °C/W
PACKAGE STYLE
MILLIMETER
S
INCHES
DIM MIN MAX MIN MAX
A 2.29 2.67 0.090 0.105
C 0.89 1.40 0.035 0.055
D 0.41 0.61 0.016 0.024
F 0.89 1.09 0.035 0.043
G 0.08 0.15 0.003 0.006
K 4.45 5.84 0.175 0.230
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 10 V
h_FE
V_CE = 10 V
I_C = 50 mA
C_CB
V_CB = 10 V
f = 1.0 MHz
f_t
V_CE = 10 V
I_C = 50 mA
NF
V_CE = 10 V
I_C = 10 mA
f = 0.5 GHz
f = 0.5 GHz
MINIMUM TYPICAL MAXIMUM
15
20
3.0
100
30
200
UNITS
V
V
V
nA
---
1.2
1.5
pF
4.5
GHz
2.0
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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