MRF905 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

MRF905
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF905 is Designed for
General Purpose Oscillator
Applications.
FEATURES:
• V_CC = 20 V
• Omnigold™ Metalization System
• Collector Connected to Case
MAXIMUM RATINGS
I_C
150 mA
V_CB
35 V
P_DISS
4.0 W @ T_C = 100 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
25 °C/W
PACKAGE STYLE TO-46
1 = EMITTER 2 = BASE 3 = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 20 V
h_FE
V_CE = 10 V
I_C = 100 mA
C_OB
V_CB = 20 V
f = 1.0 MHz
f_T
P_OUT
V_CE = 10 V
V_E = 20 V
I_C = 100 mA
I_E = 110 mA
f = 200 MHz
f = 1.68 GHz
MINIMUM TYPICAL MAXIMUM
20
35
3.5
100
20
150
UNITS
V
V
V
µA
---
5.0
pF
2500
400
500
MHz
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1