MRF904 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF904
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF904 is Designed for
General Purpose Amplifier
Applications.
FEATURES:
• NF = 1.5 dB (Typ) 450 MHz
• G_max = 16 dB (Typ) 450 MHz
• f_T = 4.0 GHz (Typ) @ I_C = 15 mA
MAXIMUM RATINGS
I_C
30 mA
V_CBO
25 V
V_CEO
15 V
P_DISS
0.2 W @ T_A = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 5.0 mA
C_OB
V_CB = 10 V
f = 1.0 MHz
f_T
NF
G_max
NF
G_max
V_CE = 10 V
V_CE = 6.0 V
V_CE = 6.0 V
I_C = 15 mA
I_C = 5.0 mA
I_C = 5.0 mA
f = 1.0 GHz
f = 450 MHz
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
15
25
3.0
50
30
200
UNITS
V
V
V
nA
---
1.0
pF
4.0
GHz
1.5
dB
16
dB
2.5
dB
10
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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