MRF901 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

MRF901
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF901 is Designed for high
gain. Low noise small-signal amplifiers.
Applications up to 2.5 GHz.
FEATURES:
• Low Noise Figure
• High Gain
• Common Emitter
MAXIMUM RATINGS
I_C
30 mA
V_CBO
25 V
V_CEO
15 V
V_EBO
2.0 V
P_DISS
0.375 W @ T_C = 75 °C
T_J
-55 °C to +150 °C
T_STG
-55 °C to +150 °C
θ_JC
200 °C/W
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 0.1 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 0.1 mA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 5.0 mA
MINIMUM TYPICAL MAXIMUM
25
15
2.0
50
30
80
200
UNITS
V
V
V
nA
---
C_cb
V_CB = 10 V
f_T
V_CE = 10 V
I_C = 15 mA
f = 1.0 MHz
f = 1.0 GHz
0.40
1.0
pF
4.5
GHz
NF_MIN
V_CE = 6.0 V
I_C = 15 mA
f = 1.0 GHz
2.0
2.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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