MRF894 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MRF894
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF894 is agold metalized
epitaxial silicon NPN transistor, using
diffused ballast resistors for high
linearity Calss-AB operation for cellular
base station application.
FEATURES:
• Internal Input Matching Network
• P_G = 7.5 dB at 30 W/960 MHz
• Omnigold™ Metalization System
• η_C = 55 % Typ.
• = Load mismatch capability 20:1
MAXIMUM RATINGS
I_C
7.5 A
V_CBO
48V
V_CEO
25 V
V_EBO
3.5 V
P_DISS
88 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.0 °C/W
PACKAGE STYLE .230 6L FLG
.040x45° ^C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
MINIMUM
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 Ma
BV_CER
I_C = 40 mA
R_BE = 150 Ω
BV_CEO
I_C = 40 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CE = 24 V
h_FE
V_CE = 20 V
I_C = 2.0 A
MINIMUM
48
30
25
3.5
10
15
TYPICAL
55
40
28
5.0
---
40
MAXIMUM
---
---
---
---
---
100
C_OB
V_CB = 25 V
f = 1.0 MHz
42
50
P_G
V_CE = 25 V
I_CQ = 60 mA
f = 860 MHz
7.5
9.0
---
IMD₃
P_OUT = 30 W f₁ = 860.0 MHz f₂ = 860.1 MHz
-35
η_C
55
UNITS
V
V
V
mA
---
pF
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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