MRF890_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF890
NPN SILICON RF POWER TRE ANSISTOR
DESCRIPTION:
The ASI MRF890 is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
• Pg = 9.0 dB min. @ 900 MHz
• P_1dB = 2.0 Watts min. at 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.5 A
V_CBO
55 V
V_CER
30 V
V_EBO
4.0 V
P_DISS
7.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
θ_JC
-65 °C to +150 °C
25 ^°C/W
PACKAGE STYLE .205 4L STUD
D
2
1
3
A
C
B
G
E
H
F
#8-32UNC
J
D IM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
M A X IM U M
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
1 = Collector 2 = Emitter 3 = Base
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 30 V
f = 1.0 MHz
P_G
η_C
V_CC = 24 V
P_OUT = 2.0 V
f = 900 MHz
MINIMUM TYPICAL MAXIMUM
30
55
4.0
500
10
100
2.0
9.0
55
UNITS
V
V
V
µA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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