MRF890 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF890
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF890 is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
• Pg = 9.0 dB min. @ 900 MHz
• P_1dB = 2.0 Watts min. at 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.5 A
V_CBO
55 V
V_CER
30 V
V_EBO
4.0 V
P_DISS
7.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
θ_JC
-65 °C to +150 °C
25 ^°C/W
PACKAGE STYLE .205 4L STUD
C
E
E
B
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 30 V
f = 1.0 MHz
P_G
V_CC = 24 V
η_C
P_OUT = 2.0 V
f = 900 MHz
MINIMUM TYPICAL MAXIMUM
30
55
4.0
500
10
100
2.0
9.0
55
UNITS
V
V
V
µA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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