MRF839F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF839F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF839F is Designed for
Class AB, Common Emitter
Applicatons Up to 960 MHz.
FEATURES INCLUDE:
• Input Matching Network
• High Gain
• Gold Metalization
MAXIMUM RATINGS
I_C
0.6 A
V_CES
P_DISS
T_J
T_STG
θ_JC
36 V
20 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +150 ^OC
9.0 ^OC/W
PACKAGE STYLE .230 6L FLG
.040x45° ^C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
M IN IM U M
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
1 & 3 & 4 & 6 = EMITTER 2 = BASE
5 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 5.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 100 µA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
40
16
3.5
1
10
150
UNITS
V
V
V
mA
---
C_OB
V_CB = 15 V
f = 1.0 MHz
10
pF
P_G
V_CE = 12.5 V
I_CQ = 50mA
P_OUT = 3.0 W
8.0
10.0
dB
η_C
F_O = 870 MHz
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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