MRF838A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF838A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF838A is a Common Emitter
Device Designed for Class A, B and C
Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
I_C
600 mA
V_CBO
P_DISS
T_J
T_STG
θ_JC
36 V
8.75 W @ T_C = 25 ^OC
-65 ^OCto +200 ^OC
-65 ^OCto +200 ^OC
20 ^OC/W
PACKAGE STYLE .205 4L STUD
D
3
4
A
2C
1
B
G
E
H
F
#8-32UNC
J
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
M A XIM U M
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
1 & 3 = EMITER 2 = BASE
4 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 10 mA
BV_CEO
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 150 mA
MINIMUM TYPICAL MAXIMUM
36
18
4.0
20
UNITS
V
V
V
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
7.5
pF
P_G
η_C
V_CE = 12.5 V
P_OUT = 1.0 W
f = 870 MHz
6.5
50
7.5
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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