MRF8372 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF8372
NPN SILICON LOW POWER TRANSISTOR
DESCRIPTION:
The ASI MRF8372 is Designed for
Wideband large signal stages in the 800 MHz
and UHF frequency ranges.
FEATURES:
• P_OUT = 750 mW
• P_G = 8.0 dB min.
• η = 60% typical
• R1 suffix – Tape and Reel, 500 units
• R2 suffix – Tape and Reel, 2500 units
MAXIMUM RATINGS
I_C
200 mA
V_CBO
30 V
V_CEO
16 V
V_EBO
3.0 V
P_DISS
2.2 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
45 °C/W
PACKAGE STYLE SO-8
PIN 1,4,5,8 = EMITTER PIN 2,3 = COLLECTOR PIN, 6, 7 = BASE
CHARACTERISTICS TC = 25°C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 5.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 0.1 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
30
16
3.0
.0
30
200
UNITS
V
V
V
mA
---
C_OB
V_CB = 15 V
f = 1.0 MHz
2.75
pF
P_G
V_CE = 12.5 V
P_OUT = 0.75 W f = 870 MHz
8.0
9.5
dB
η_C
50
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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