MRF837 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF LOW POWER TRANSISTOR

MRF837
NPN SILICON RF LOW POWER TRANSISTOR
DESCRIPTION:
The ASI MRF837 is Designed primerily
for wideband large signal predriver
stages in 800 MHz and UHF frequency
ranges.
FEATURES INCLUDE:
• Min gain 8.0 dB @ 750 mW/870 MHz
• Silicon Nitride passivated
• Low cost Plastic Package
MAXIMUM RATINGS
I_C
200 mA
V_CBO
36 V
P_DISS
1.0 W @ T_C = 25 °C
T_J
-65 °Cto +150 °C
T_STG
-65 °Cto +150 °C
θ_JC
40 °C/W
PACKAGE STYLE MACRO-X
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A
4.44 5.21 0.175 0.205
C
1.90 2.54 0.075 0.100
D
0.84 0.99 0.033 0.039
F
0.20 0.30 0.008 0.012
G
0.76 0.14 0.030 0.045
K
7.24 8.13 0.285 0.320
L
10.54 11.43 0.415 0.450
N
---
1.65
---
0.065
1 = COLLECTOR
2 =EMITER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 5.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 100 µA
I_CES
V_CE = 15 V
h_FE
V_CE = 10 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
36
16
4.0
100
30
200
UNITS
V
V
V
µA
---
C_OB
V_CB = 15 V
f = 1.0 MHz
1.8
2.5
pF
P_G
η_C
V_CE = 12.5 V
P_OUT = 0.75 W
f = 870 MHz
8.0
55
10
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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