MRF750 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

MRF750
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF750 is Designed for UHF
Large Signal Amplifier Application from
407 to 512 MHz, and 5.0 to 10 V.
FEATURES INCLUDE:
• High Power Gain
• Infinite VSWR
MAXIMUM RATINGS
I_C
200 mA
V_CE
P_DISS
T_J
T_STG
θ_JC
13 V
2.5 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +150 ^OC
28.5 ^OC/W
PACKAGE STYLE .205" 4L PILL
D
3
4
1
A
2C
B
F
G
H
E
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.976 / 24.800
1.00 / 25.400
B
.976 / 24.800
1.00 / 25.400
C
.028 / 0.700
.031 / 0.800
D
.138 / 3.500
E
.106 / 2.700
.139 / 3.400
F
.039 / 1.000
.047 / 1.200
G
.004 / 0.100
.006 / 0.150
H
.200 / 5.100
.208 / 5.300
1 & 3 = EMITTER 2 = BASE
4 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 9.0 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
C_ob
V_CB = 7.5 V
f = 1.0 MHz
G_PE
V_CC = 7.5 V
P_out = 500 mW
fo = 470 MHz
η
MINIMUM TYPICAL MAXIMUM
13
25
4.0
500
20
70
UNITS
V
V
V
µA
---
3.5
5.0
pF
10
11
dB
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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