MRF652S Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF652S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF652S is Designed for
UHF large signal, amplifier
Applications in FM equipment up to
512 MHz.
FEATURES:
• Common Emitter
• P_G = 10 dB at 5.0 W/512 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CBO
36 V
V_CER
16 V
V_EBO
4.0 V
P_DISS
T_J
T_STG
θ_JC
25 W @ T_C = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
200 °C/W
PACKAGE STYLE .280 4L PILL
A
E
ØB
C
B
E
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 25 mA
BV_CES
I_C = 25 mA
BV_CBO
I_C = 25 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
16
36
36
4.0
1.0
10
150
UNITS
V
V
V
V
mA
---
C_ob
V_CB = 15 V
f = 1.0 MHz
9.5
15
pF
P_G
V_CC = 12.5 V
P_OUT = 5.0 W
η_C
f = 512 MHz
10
60
11
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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