MRF630 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF630
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF630 is Designed for
UHF large signal, FM Land Mobile
Applications up to 512 MHz.
FEATURES:
• Grounded Emitter
• P_G = 9.5 dB at 3.0 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.0 A
V_CEO
16 V
V_CES
36 V
V_EBO
4.0 V
P_DISS
8.75 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
20 °C/W
PACKAGE STYLE TO 205AD
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 9.02 9.29 0.355 0.366
B 8.01 8.50 0.315 0.335
C 4.20 4.57 0.165 0.180
D 0.44 0.53 0.017 0.021
E 0.44 0.88 0.017 0.035
F 0.41 0.48 0.016 0.019
G 5.08 BSC 0.200 BSC
H 0.72 0.86 0.028 0.034
J 0.74 0.01 0.029 0.040
K 12.70 19.05 0.500 0.750
L 6.35 -- 0.25 --
M 45° BSC
45 °BSC
P -- 1.27 -- 0.050
R 2.54 -- 0.10 --
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 12.5 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 12.5 V
f = 1.0 MHz
P_G
V_CC = 12.5 V
P_OUT = 3.0 W
f = 470 MHz
η_C
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
UNITS
V
V
V
mA
---
8.0
12
pF
9.5
10.8
dB
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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