MRF616 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF616
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF616 is Designed for
Common Emitter Class C Amplifier
Applications in 12.5 Volt UHF Mobile
Radios.
FEATURES INCLUDE:
• High Gain, 11 DB Typical
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
250 mA
V_CBO
P_DISS
T_J
T_STG
θ_JC
36 V
5.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
35 ^OC/W
PACKAGE STYLE .280" 4L PILL
A
E
ØB
C
E
B
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 5.0 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 150 mA
MINIMUM TYPICAL MAXIMUM
36
16
4.0
20
C_OB
V_CB = 12.5 V
f = 1.0 MHz
3.5
P_G
η_C
V_CE = 12.5 V
P_OUT = 1.0 W
f = 470 MHz
10
11
65
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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