MRF604 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF604
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF604 is Designed for
General Purpose Oscillator
Applications up to 175 MHz.
FEATURES:
• V_CC = 12.5 V
• P_OUT = 1.0 W
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
150 mA
V_CB
40 V
P_DISS
2.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
88 °C/W
PACKAGE STYLE TO-46
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CEO
V_CE = 12 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
C_OB
V_CB = 12.5 V
f = 1.0 MHz
η_C
V_CC = 12.5 V P_OUT = 1.0 W
f = 175 MHz
P_G
V_CC = 12.5 V
P_OUT = 1.0 W
f = 175 MHz
f_t
V_CE = 10 V
I_E = 50 mA
f = 200 MHz
MINIMUM TYPICAL MAXIMUM
20
40
3.5
1.0
20
200
UNITS
V
V
V
mA
---
3.5
pF
50
%
10
dB
800
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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