MRF5943C Datasheet, PDF (1/1 Pages) Advanced Power Technology – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF5943C
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MRF5943C is a High
Frequency Transistor for General
Purpose Amplifier Applications.
MAXIMUM RATINGS
I_C
400 mA
V_CEO
30 V
V_CBO
40 V
V_EBO
3.5 V
P_DISS
1.0 W @ T_A = 25 °C
3.5 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
125 °C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
NONE
CHARACTERISTICS TA = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 15 V
I_CEO
V_CE = 20 V
h_FE
V_CE = 15 V
I_C = 50 mA
N_F
G_{U max}
V_CE = 15 V
V_CE = 15 V
I_C = 35 mA f = 200 MHz
I_C = 35 mA f = 200 MHz
MINIMUM
30
40
3.5
25
TYPICAL MAXIMUM
50
10
300
5.5
11.4
UNITS
V
V
V
µA
µA
---
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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