MRF587 Datasheet, PDF (1/1 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

MRF587
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF587 is Designed for
High Linearity Power Amplifier
Applications up to 500 MHz.
FEATURES:
• P_G = 16 dB Typical at 220 W/500 MHz
• Low Noise Figure
• Diffused Ballast Resistors
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
200 mA
V_CBO
34 V
V_CEO
17 V
V_EBO
2.5 V
P_DISS
5.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE .280 4L STUD
A
45°
1
B²
3
4
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
Lead 1 = Collector 2 & 3 = Emitter 4 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 10 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
34
17
2.5
50
50
200
UNITS
V
V
V
µA
---
C_cb
V_CB = 10 V
f = 1.0 MHz
1.7
2.2
pF
G_P
11
dB
η_C
V_CC = 15 V
I_C = 90 mA
f = 0.3 GHz
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1