MRF586 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF586
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The MRF586 is a High Frequency
Transistor Designed for High Gain Low
Noise CATV, and MATV Amplifier
Applications.
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
G
H
MAXIMUM RATINGS
I_C
200 mA
V_CE
P_DISS
T_J
T_STG
θ_JC
17 V
2.5 W @ T_C = 50 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
70 ^OC/W
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.200 / 5.080
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.335 / 8.510
.370 / 9.370
E
.305 / 7.750
.335 / 8.500
F
.240 / 6.100
.260 / 6.600
G
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
1 = EMITTER 2 = BASE
3 = COLLECTOR(CASE)
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 10 V
h_FE
V_CE = 5.0 V I_C = 50 mA
f_t
V_CE = 15 V
I_C = 90 mA
f = 500 MHz
C_OB
V_CB = 10 V
f = 1.0 MHz
NF
T_B3
D_IN
G_Umax
V_CE = 15 V
V_CE = 15 V
V_CE = 15 V
V_CE = 15 V
I_C = 90 mA
I_C = 90 mA
I_C = 90 mA
I_C = 90 mA
f = 300 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
MINIMUM
17
34
2.5
50
NONE
TYPICAL MAXIMUM
50
200
4500
2.2
3.0
-65
-120
14.5
UNITS
V
V
V
µA
---
MHz
pF
dB
dB
dBµV
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1