MRF5812 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for
high current, low power, low noise,
amplifiers up to 1.0 GHz.
FEATURES:
• Low Noise – 2.5 dB @ 500 MHz
• Ftau – 5.0 GHz @ 10 V, 75 mA
• Cost Effective SO-8 package
MAXIMUM RATINGS
I_C
200 mA
V_CBO
30 V
V_CEO
15 V
V_EBO
2.5 V
P_DISS
1.25 W @ T_C = 25 °C
PACKAGE STYLE SO-8
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 0.1 mA
I_CBO
V_CB = 15 V
I_EBO
V_CE = 2.0 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
30
15
2.5
0.1
0.1
50
200
UNITS
V
V
V
mA
mA
---
C_OB
F_TAU
V_CB = 10 V
V_CE = 10 V
I_C = 75 mA
f = 1.0 MHz
f = 1.0 GHz
1.4
2.0
pF
5.0
GHz
NF_min
G_NF
G_{U max}
MSG
|S₂₁|²
V_CE = 10 V
I_C = 50 mA
2.0
3.0
dB
13
15.5
%
f = 500 MHz
17.8
dB
20
dB
15
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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